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Articles
Volume 25 (2024)
Vol. 25 No. 1 1-150
Vol. 25 No. 2 151-321
Vol. 25 No. 3 323-473
Vol. 25 No. 4 475-716
Vol. 25 No. 5 717-929
Volume 24 (2023)
Vol. 24 No. 1 1-209
Vol. 24 No. 2 211-414
Vol. 24 No. 3 415-593
Vol. 24 No. 4 595-752
Vol. 24 No. 5 753-920
Vol. 24 No. 6 921-1078
Volume 23 (2022)
Vol. 23 No. 1 1-108
Vol. 23 No. 2 109-242
Vol. 23 No. 3 243-408
Vol. 23 No. 4 409-557
Vol. 23 No. 5 559-750
Vol. 23 No. 6 751-945
Volume 22 (2021)
Vol. 22 No. 1 1-129
Vol. 22 No. 2 131-251
Vol. 22 No. 3 253-368
Vol. 22 No. 4 369-481
Vol. 22 No. 5 483-596
Vol. 22 No. 6 597-738
Volume 21 (2020)
Vol. 21 No. 1 1-130
Vol. 21 No. 2 131-283
Vol. 21 No. S1 1-86
Vol. 21 No. 3 285-391
Vol. 21 No. 4 393-514
Vol. 21 No. 5 515-614
Vol. 21 No. 6 615-756
Volume 20 (2019)
Vol. 20 No. 1 1-120
Vol. 20 No. 2 121-203
Vol. 20 No. 3 205-300
Vol. 20 No. S1 1-124
Vol. 20 No. 4 301-448
Vol. 20 No. 5 449-576
Vol. 20 No. 6 577-669
Volume 19 (2018)
Vol. 19 No. 1 1-86
Vol. 19 No. 2 87-182
Vol. 19 No. 3 183-278
Vol. 19 No. 4 279-359
Vol. 19 No. 5 361-443
Vol. 19 No. 6 445-529
Volume 18 (2017)
Vol. 18 No. 1 1-91
Vol. 18 No. 2 93-175
Vol. 18 No. 3 177-273
Vol. 18 No. 4 275-346
Vol. 18 No. 5 347-408
Vol. 18 No. 6 409-476
Vol. 18 No. 7 477-553
Vol. 18 No. 8 555-620
Vol. 18 No. 9 621-695
Vol. 18 No. 10 697-765
Vol. 18 No. 11 767-830
Vol. 18 No. 12 831-893
Volume 17 (2016)
Vol. 17 No. 1 1-66
Vol. 17 No. 2 67-137
Vol. 17 No. 3 139-270
Vol. 17 No. 4 271-400
Vol. 17 No. 5 401-522
Vol. 17 No. 6 523-658
Vol. 17 No. 7 659-788
Vol. 17 No. 8 789-898
Vol. 17 No. 9 899-1010
Vol. 17 No. 10 1011-1122
Vol. 17 No. 11 1123-1213
Vol. 17 No. 12 1215-1298
Volume 16 (2015)
Vol. 16 No. 1 1-179
Vol. 16 No. 2 181-279
Vol. 16 No. 3 281-365
Vol. 16 No. 4 367-449
Vol. 16 No. 5 451-655
Vol. 16 No. S1 1-161
Vol. 16 No. 6 657-728
Volume 15 (2014)
Vol. 15 No. 1 1-56
Vol. 15 No. 2 57-139
Vol. 15 No. 3 141-206
Vol. 15 No. 4 207-276
Vol. 15 No. 5 277-369
Vol. 15 No. 6 371-554
Volume 14 (2013)
Vol. 14 No. 1 1-143
Vol. 14 No. S1 1-85
Vol. 14 No. 2 145-278
Vol. 14 No. 3 279-439
Vol. 14 No. 4 441-590
Vol. 14 No. 5 591-651
Vol. 14 No. 6 653-716
Volume 13 (2012)
Vol. 13 No. 1 1-91
Vol. 13 No. 2 93-192
Vol. 13 No. 3 193-352
Vol. 13 No. S1 1-157
Vol. 13 No. 4 353-507
Vol. 13 No. 5 509-665
Vol. 13 No. S2 159-432
Vol. 13 No. 6 667-829
Volume 12 (2011)
Vol. 12 No. 1 1-113
Vol. 12 No. 2 115-221
Vol. 12 No. 3 223-356
Vol. 12 No. 4 357-491
Vol. 12 No. 5 493-614
Vol. 12 No. 6 615-755
Volume 11 (2010)
Vol. 11 No. 1 1-128
Vol. 11 No. 2 129-285
Vol. 11 No. 3 287-404
Vol. 11 No. 4 405-515
Vol. 11 No. 5 517-640
Vol. 11 No. 6 641-772
Volume 10 (2009)
Vol. 10 No. 1 1-123
Vol. 10 No. 2 125-242
Vol. 10 No. 3 243-407
Vol. 10 No. 4 409-580
Vol. 10 No. 5 581-704
Vol. 10 No. 6 705-854
Volume 9 (2008)
Vol. 9 No. 1 1-87
Vol. 9 No. 2 93-214
Vol. 9 No. 3 215-333
Vol. 9 No. 4 335-436
Vol. 9 No. 5 437-548
Vol. 9 No. 6 549-682
Volume 8 (2007)
Vol. 8 No. 1 1-86
Vol. 8 No. 2 87-160
Vol. 8 No. 3 161-228
Vol. 8 No. 4 229-299
Vol. 8 No. 5 301-381
Vol. 8 No. 6 383-467
Volume 7 (2006)
Vol. 7 No. 1 1-89
Vol. 7 No. 2 91-182
Vol. 7 No. 3 183-279
Vol. 7 No. 4 281-383
Volume 6 (2005)
Vol. 6 No. 1 1-89
Vol. 6 No. 2 91-152
Vol. 6 No. 3 197-270
Vol. 6 No. 4 271-350
Volume 5 (2004)
Vol. 5 No. 1 1-93
Vol. 5 No. 2 95-190
Vol. 5 No. 3 191-286
Vol. 5 No. 4 287-398
Volume 4 (2003)
Vol. 4 No. 1 1-48
Vol. 4 No. 2 49-103
Vol. 4 No. 3 105-154
Vol. 4 No. 4 155-216
Volume 3 (2002)
Vol. 3 No. 1 1-40
Vol. 3 No. 2 41-85
Vol. 3 No. 3 87-234
Vol. 3 No. 4 235-281
Volume 2 (2001)
Vol. 2 No. 1 1-44
Vol. 2 No. 2 45-91
Vol. 2 No. 3 93-145
Vol. 2 No. 4 147-192
Volume 1 (2000)
Vol. 1 No. 1 1-82
Vol. 1 No. 2 83-119
Volume 6, Number 3, 197-270, September 2005
[Articles]
Influence on the growth temperature for one-dimensional nanostructures by halide vapor-phase epitaxy
Yun-ki Byeuna,b, Kyong-Sop Hana and Sung-Churl Choib,*
2005; 6(3): 197-200
Growth and optoelectrical properties of CdIn2S4 epilayers by hot wall epitaxy
Kwang Joon Hong*
2005; 6(3): 201-204
The effect of H2, N2 and N2O doping on DLC thin films depositedby a PECVD method
Y.T. Kim*, S.G. Yoon, S.J. Suh, J.H. Leea, G.E. Jangb and D.H. Yoon
2005; 6(3): 205-208
Bulk and homoepitaxial films of III-V nitride semiconductors: Optical studies
Jaime A. Freitas, Jr.
2005; 6(3): 209-217
Synthetic crossed-lamellar microstructures in oxide ceramics
Vikram S. Kaul and K.T. Faber*
2005; 6(3): 218-222
Calcium aluminate composites with controlled duplex structures:I. Hydration reaction and densification
W.J. Wei*, S.D. Tze and H.C. Liaw
2005; 6(3): 223-229
Calcium aluminate composites with controlled duplex structures:II. Microstructural development and mechanical properties
H.J. Liaw and Wen-Cheng. J. Wei*
2005; 6(3): 230-235
Growth and atomic ordering of hard magnetic L10-FePt, FePd and CoPt alloy nanoparticles studied by transmission electron microscopy: alloy system and particle size dependence
Yoshihiko Hirotsu* and Kazuhisa Sato
2005; 6(3): 236-244
Field electron emission from polycrystalline GaN nanorods
S. Hasegawa*, S. Nishida, T. Yamashita and H. Asahi
2005; 6(3): 245-249
The influence of lattice defects on the crystal structure of hydrothermal BaTiO3 powders
Xuezheng Wei* and Yali Lia
2005; 6(3): 250-254
Calcium phosphate films deposited by electrostatic spray deposition and an evaluation of their bioactivity
Young-Mu Lim, Byung-Hoon Kima, Young-Sun Jeona,b, Kyung-Ok Jeona,b and Kyu-Seog Hwangb,*
2005; 6(3): 255-258
Effects of sequential annealing processes on surface morphology and resistivity ofIndium-Tin Oxide (ITO) thin films fabricated by chemical solution deposition
Young Hoon Yuna,*, Hyun Woong Han, Mi Jung Choi and Sung Churl Choi
2005; 6(3): 259-262
Fabrication and mechanical properties of silicon nitride laminate composites
Dong-Woo Shin* and Hai Guo
2005; 6(3): 263-265
A fracture model and prediction of mechanical behavior in Si3N4 laminate composites
Dong-Woo Shin* and Hai Guo
2005; 6(3): 266-270