High quality CdIn2S4 epilayers on GaAs(100) substrates were first grown using a hot wall epitaxy (HWE) method. The CdIn2S4 epilayer was found to grow in the <110> direction. The optimum growth temperatures of the substrate and the source turned out to be 420 and 630 oC, respectively. From the measurements of the temperature dependence of the Hall mobility, the scattering in the high temperature range was mainly related to the acoustic mode of lattice vibrations and the scattering in the low temperature range was most pronounced due to an impurity effect. The temperature dependence of the energy band gap on the CdIn2S4/GaAs epilayer obtained from the optical absorption measurement was found to be Eg(T) = 2.7116 eV-(7.65 × 10−4 eV/K)T2/(425 + T).

Keywords: CdIn2S4 epilayer, hot wall epitaxy, semiconducting ternary compound, Hall mobility, acoustic mode, impurity effect, energy band gap