Interfacial chemistry and kinetics induced by SiC/Co solid state reactions were investigated at temperatures between 850 oC and 1450 oC for various times. The reaction mechanisms and the typical layer sequence in the reaction zone are discussed under the consideration of reaction kinetics and thermodynamics. The formation of silicides and carbon was first observed above 850 oC. At 1050 oC, and as the reaction proceeded, the initially formed Co2Si layer was converted to CoSi. The deposited cobalt thin film reacted completely with SiC after annealing at 1050 oC for 0.5 h. The thermodynamically-stable CoSi was the only observed silicide in the reaction up to 1450 oC. Reaction kinetics are proposed to estimate the effective reaction constant from parabolic growth of the reaction zone. An interfacial model is discussed to interpret the interfacial formation and phase distribution of this system.

Keywords: interface chemistry, reaction kinetics, cobalt silicides, SiC/Co, solid state reaction.