Articles
  • AlN piezoelectric materials for wireless communication thin film components 
  • Ju-hyung Kima,b, Si-Hyung Leea, Jin-Ho Ahnb and Jeon-Kook Lee*,a
  • aThin Film Technology Research Center, KIST, Seoul 136-791, Korea bDepartment of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
Abstract
A Bragg reflector type FBAR using AlN piezoelectric with quarter wavelength thickness has been fabricated, where the Bragg reflector was composed of W-SiO2 pairs. By numerical simulation, considering actual acoustic losses of each layer, an analysis of the frequency response of the resonator has been made and this could be explained using an equivalent circuit with parasitic elements. The Effective electromechanical coupling constant ( ) and the Quality factor (Qs), figures of merit of the resonator, were about 1.1% and 307, respectively.

Keywords: Bragg reflector, FBAR, AlN.

This Article

  • 2002; 3(1): 25-28

    Published on Mar 31, 2002