Transparent ZnO films were prepared by a chemical solution deposition process using an Al/Ni/Zn organic solution. Spin-coated film was amorphous, but the film annealed at 500degreesC showed a Wurtzite ZnO structure and (002) preferred orientation. The thicknesses of the films were 0.09-0.15 mum for 5-times coating and 0.2-0.3 mum for 10-times coating. The transmittance of the films was 43-97% in the visible light region (400-800 nm). An abrupt increase in the absorption occurred below 380 nm. The electrical resistivity of the as-produced ZnO films was greater than 50 Q cm. A heat-treatment of the film in hydrogen decreased the electrical resistivity to 0.37 Omega cm. Ni-doped (2 mol%)ZnO films showed a lower electrical resistivity (0.14 Omega cm). The electrical resistivity of this film became lower still by the addition of Al to about 0.03 Omega cm (Ni(2 mol%)/Al(l mol%)/ZnO). But higher Al-doped Ni(2 mol%)/Al(3 mol%)/ZnO Elms showed a higher electrical resistivity (about 0.25 Omega cm) than Ni(2 mol%)/ZnO film.

Keywords: ZnO, Film, Transparency, Electrical resistivity, Band gap, Al, Ni.