In this research, Er/Al co-doped Si/SiO2 Optical waveguide films were fabricated for an optical amplifier application. The co-doping of Er and Al into silica soot deposited by FHD was successfully carried out by solution doping. The optimum conditions for sintering were 1330degreesCsimilar to1350degreesC. The fabricated waveguides showed a refractive index difference of 0.8similar to0.9%, which is appropriate for amplifier operation. According to the results of the fluorescence measurements, we could confirm the depression of the concentration quenching of Er ions by the co-doping with Al.

Keywords: silica, wavequide, optical amplifier, co-doping fluorescence.