Articles
  • Growth and structural properties of β-Ga2O3 thin films on GaN substrates by an oxygen plasma treatment
  • H. J. Leea, S. M. Kanga, T. I. Shina, J. W. Shura and D. H. Yoona,b,*
  • a School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746, Korea b SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
Abstract
β-Ga2O3 thin films were successfully fabricated on the surface of GaN substrates by an oxygen plasma treatment. The thickness of the films was measured by scanning electron microscopy (SEM). The monoclinic structure and chemical composition of the β-Ga2O3 crystals were confirmed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). In addition, the surface morphology of the films was investigated by atomic force microscopy (AFM). The results obtained for the β-Ga2O3 thin films indicated the potential use of GaN crystals.

Keywords: Oxidation, β-Ga2O3 thin film, GaN substrate, Plasma treatment

This Article

  • 2008; 9(2): 180-183

    Published on Apr 30, 2008