Articles
  • Strain measurement in 6H-SiC under external stress 
  • J. Kim*, F. Rena and S.J. Peartonb
  • Department of Chemical & Biological Engineering, College of Engineering, Korea University, Anam-dong 5-1, Sungbuk-gu, Seoul 136-701, Korea a Department of Chemical Engineering, University of Florida, Gainesville, FL, USA b Department of Materials Science and Engineering, University of Florida, Gainesville, FL, USA
Abstract
6H-SiC was chosen to measure the strain by external stress using micro-Raman scattering. Under various external stress conditions, our experiments showed that the top part of 6H-SiC was under a tensile stress while the bottom part of 6H-SiC was under a compressive stress. When it was bent more and more, the stress was increased at both top and bottom. This data is very helpful in understanding the mechanical properties of a 6H-SiC cantilever which is very promising in SiC micro electro mechanical system (MEMS) applications in harsh environments.

Keywords: stain; 6H-SiC; stress; Raman; MEMS

This Article

  • 2006; 7(3): 239-240

    Published on Sep 30, 2006