Articles
  • Investigation of the {100}-oriented texture growth of diamond film as functions of carburization and bias enhanced nucleation times
  • R. Guillemain, S.-H. Kima*, S.-W. Choa, Y.-H. Kimb, T.-G. Kimc, S.H. Leed and S.B. Moonc
  • Ecole Nationale Superieure de Chimie et physique de Bordeaux, 33400 Talence, France a Department of New Materials Chemistry, Silla University, Pusan 617-736, Korea b Dpartment of Physics, University of Oxford, oxl, 3pu, U.K c Department of Materials Engineering, Miryang University, Miryang 627-702, Korea d Department of Chemistry, Pusan National University, Pusan 609-735, Korea e Department of Chemical Education, Pusan National University, Psan 609-735, Korea
Abstract
The {110}-oriented texture growth of diamond films on {100} Si substrate (1 x 1 cm2) could be achieved by a three-step peocedure (carburization → bias echanced nucleatio (BRN) → growth) in a microwave-plasma-enhanced chemical vapor deposition (MPECVD) system. The surface morphologies of the films were investigared as functions of the carburization and BEN times. We demonstrated the necessity of the catburization step of at least 100 minutes to readily achieve the textured growth of a diamond film. The grain size increased with increasing carburization time or BEN time. We studied the effects of the carburization time and the BEN time on the {100}-oriented texture growth of a diamond film. The optimal BEN time was suggested by considering the carburization time. The evolution of the film morphology indicates that the increase in carburization time may decrease the tilted angle of the {100}-oriented texture morphology.

Keywords: {100}-Oriented texture growth, Diamond film, Carburization, BEN

This Article

  • 2000; 1(2): 102-108

    Published on Dec 31, 2000