Articles
  • Fabrication of thin film transistor using magnesium zinc oxide (MgZnO) as a semiconductor layer by magnetron sputtering technique
  • Amuthasurabi.Ma, Chandradass.Jb,*, Seong-Ju Parkc and Baskara Sethupathi.Pb
  • aPh.D Scholar, Department of Material Science and Engineering,Ponnaiyah Ramajayam Institute of Science and Technology, Thanjavur bCentre for Automotive Materials, Department of Automobile Engineering, SRM Institute of Science and Technology, Kancheepuram, Tamilnadu, India cGIST, Department of Materials Engineering, Korea
Abstract
Inverted staggered thin film transistors (TFTs) using magnesium zinc oxide (MgZnO) material as a channel layer have been fabricated over the glass substrate. A radio frequency magnetron sputtering technique was used to deposit thin films at a very low temperature of 100 oC. The structural and electrical characteristics were investigated. The semiconductor film shows slightly enhanced grain size without any crack with few grain boundaries. For the first time the self heating effect on the TFT fabricated using MgZnO was discussed. The electrical characteristics of MgZnO based device exhibit reduced self-heating effect compared with undoped zinc oxide. The calculated parameters are carrier mobility 1.08 cm2/V-s, threshold voltage 15 V, leakage current 10−10 A and current ratio (on/off) 10−5. The low deposition and processing temperatures make MgZnOTFTs very promising for the flexible electronics.

Keywords: MgZnO, Transistor, Self-heating, Sputtering, Characteristics

This Article

  • 2019; 20(1): 95-98

    Published on Feb 28, 2019