A single crystal of p-CdIn2Te4 was grown in a three-stage vertical electric furnace using the Bridgman method. The quality of the crystal grown has been investigated by x-ray diffraction and photoluminescence measurements. From the photoluminescence spectra of the as-grown CdIn2Te4 crystal and various heat-treated crystals, (Do, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the CdIn2Te4:Cd, while the (Ao, X) emission completely disappeared in the CdIn2Te4:Cd. However, the (Ao, X) emission in the photoluminescence spectrum of the CdIn2Te4:Te was the dominant intensity like in the as-grown CdIn2Te4 crystal. These results indicated that the (Do, X) is associated with VTe which acted as a donor and that the (Ao, X) emission is related to VCd which acted as an acceptor, respectively. The p-CdIn2Te4 crystal was obviously found to be converted into n-type after annealing in Cd atmosphere. The origin of the (Do, Ao) emission and its transverse optical (TO) phonon replicas is related to the interaction between donors such as VTe or Cdint, and acceptors such as VCd or Teint. Also, the In in the CdIn2Te4 was confirmed not to form the native defects because it existed in a stable bonding form.

Keywords: Point defects, Photoluminescence, Annealing treatment, Bridgman technique, Cadmium indium telluride