In this study, KTN/STO thin films were fabricated on Pt/Ti/SiO2/Si substrate, as a buffer layer, and their structural and electrical properties were measured according to the number of STO coatings and investigated its applicability to electrocaloric materials. KTN/STO thin films showed a polycrystalline KTN XRD peaks with a pyrochlore phase. However, dependence on the number of STO coatings and pyrochlore phase was not observed. The average grain size was about 80~90 nm, the average thickness of 6-coated KTN thin film was about 320 nm, and the average thickness of the STO thin film coated once was about 50-55 nm. Saturation polarization of K(Ta0.6Nb0.4)O3/SrTiO3 thin films was 24.5 μC/cm2. Electrocaloric temperature change ΔT of K(Ta0.6Nb0.4)O3 thin film showed the maximum value of 3.14 oC at around 76 oC under a high electric field of 332.9 kV/cm.
Keywords: Electrocaloric effect, KTN, Seeding layer, Hysteresis loop, Sol-gel method.