We investigated the conditions for the growth of Mn6+-doped from the ternary eutectic NaCl-KCl-CsCl solvent at temperatures of 480-600oC. The doping complex ion MnO4 2− can easily substitute the SO4 2− complex ion in BaSO4 with its orthorhombic space group Pnma. The growth of Mn6+-doped BaSO4 was performed using liquid-phase epitaxy by applying an advanced growth strategy. High-quality layers were grown according to the step-flow mode with step heights of maximum 1.5 unit cells and step widths of 200 nm. The defect density was reduced to 1×103 and 7×104 etch pits cm−2 for (011) and (001), respectively. The growth velocity was one and two unit cells s−1 for 〈001〉 and 〈011〉, respectively.

Keywords: Barium sulfate, Manganese doping, Stability of manganese, Flux growth, Liquid-phase epitaxy