We investigated effect of O2/Ar gas flow ratio on structural, optical, and electrical properties of SnO2/Ag/SnO2 multilayer thin films that were deposited by sequential using RF/DC magnetron sputtering at room temperature on PET substrate. As the O2/ Ar gas flow ratio increases from 0 to 1.25% in SnO2 (35 nm)/Ag (13 nm)/SnO2 (35 nm) multilayer film, the transmittances varied from 81.2 to 87.1% at 550 nm wavelength, whereas the sheet resistance maintained around 7 Ω/□. The highest value of figure of merit (ϕΤC) was 35.3 × 10−3Ω−1 for O2/Ar flow ratio of 1%. In addition, the measured transmittance and the sheet resistance was 87.1% at 550 nm and 7.14 Ω/□, respectively.

Keywords: OMO structure, Flexibility, Figure of merit, Transmittance.