We have fabricated Si0.93Mn0.07 film at very low temperature (673 K) by vacuum evaporation and the film is ferromagnetic with a well-defined Curie temperature of 210±5 K. The as-deposited film was amorphous, however, the film epitaxially crystallizes by annealing at 973 K. For this sample, the coercive field decreases monotonically with increasing temperature. The coercive fields, Hc, are 320, 150, and 70 Oe at 5, 100, and 200 K, respectively, and the saturation magnetizations, Ms, are 2.43, 1.78, and 0.67 emu/g at 5, 100, and 200 K, respectively. The resistivity decreases as the temperature increases in the Si0.93Mn0.07 film. The temperature dependence of resistivity shows a normal semiconductor behavior.

Keywords: Ferromagnetic, Si:Mn, Vacuum Evaporation, Magnetic, Electrical, Semiconductor