The emerging technology of printed electronics will replace traditional photolithography, which requires costly materials, complex processes and expensive equipment, for the production of electronic circuits and displays. In this study, we fabricated thin-film transistors (TFTs) based on the materials of indium zinc oxide (IZO) semiconductor and Ag metal. The source-drain electrodes were fabricated on IZO film by a reverse offset printing method and annealed at various temperatures. The performance of the IZO TFTs with regard to the annealing temperature was investigated by examining the I-V characteristics. The electrical mobility of the TFTs increased as the annealing temperature increased. Inter-diffusion between the printed Ag metal and the IZO semiconductor was observed in the depth concentration profile of the Ag/IZO/SiO2/Si sample annealed at 250 oC.

Keywords: Reverse offset printing, indium zinc oxide, Thin film transistors, Electrical mobility, Depth concentration profile.