The photoconductive ZnAl2Se4(112)/GaAs(100) layers were successfully grown by using the hot wall epitaxy method. From the Hall effect measurement, scattering at the high-temperature range(T > 150 K) was mainly related to the acoustic phonon mode of lattice vibration and scattering at the low-temperature range(T < 77 K) was superior to the dislocation scattering. In the photocurrent (PC) spectroscopy, we observed the A, B, and C peaks corresponding to 351.6(3.5263 eV), 343(3.6147 eV), and 333.5 nm(3.7177 eV) at 10 K, respectively. Three peaks of A, B, and C were caused by the band-to-band transitions from the valence band state of Gamma(4)(z), Gamma(5)(x), and Gamma(5)(y) to the conduction band state of Gamma(1)(s), respectively. Thus, a characteristic splitting of the valence band governed by the selection rule was first extracted through the method of PC spectroscopy. We noted that the crystal field splitting and spin orbit splitting were 0.088 and 0.103 eV, respectively. PACS numbers: 78.20.-e, 78.56.-a.

Keywords: Characterization; Photocurrent; Hot wall epitaxy; ZnAl2Se4; Semiconducting ternary compounds