The effect of semi-polar (11-22) GaN grown on SiNx interlayer InGaN/GaN double quantum wells (DQWs) light-emitting diodes (LEDs) was investigated. The X-ray rocking curves of both on-axis and off-axis planes were narrowed down and the photoluminescence intensity of the (11-22) GaN grown on the SiNx interlayer was increased compared to that of GaN without SiNx interlayer. The optical power of LEDs with a SiNx interlayer was increased by 200% and 330% at injection currents of 20 mA and 100 mA, respectively, in comparison to the reference LEDs.

Keywords: GaN, Light emitting diodes, Semi-polar, Optical property, SiNx.