Silicon carbide (SiC) has superior mechanical and chemical properties due to its strong covalent bonding. In the special case of SiC whiskers, their application is expanding widely. In general, silicon carbide whiskers are grown with the aid of a metallic catalyst, but this method presents some problems. In the present work, SiC whiskers were grown without a metallic catalyst. SiC whiskers were grown on graphite and silicon substrates to examine the effect of the substrate on the growth behavior. Also, the effects of deposition temperature were studied.

Keywords: silicon carbide, whisker, CVD, substrate