BiFe0.97−xMn0.03ZnxO3 (BFMZ) thin films with various Zn contents (x = 0, 0.01, 0.02, 0.05, and 0.1) were prepared on Pt/Ti/SiO2/Si (100) substrates by a chemical solution deposition (CSD) technique. The crystal structures of BFMZ thin films were analyzed by X-ray diffraction (XRD). The effects of the Zn content on the magnetic, dielectric properties, and leakage current of these BFMZ films were thoroughly investigated. The analysis by XRD demonstrated that all the BFMZ thin films were of a polycrystalline rhombohedral perovskite structure with the space group R3c. For the BFMZ thin films, slim magnetic hysteresis (M-H) loops were observed, and the saturated magnetization (Ms) of the BFMZ thin film increased with an increase of the Zn content. Compared to the other BFMZ thin films with Zn content between 0.01 and 0.1, the BFMZ thin film with Zn content x = 0 has the largest dielectric constant and the smallest dielectric loss. In addition, With co-doping of Mn2+ and Zn2+ ions at Fe3+ sites in the BFMZ thin films, the leakage current density increased with an increase of the Zn concentration in the films.

Keywords: BiFe0.97−xMn0.03−xZnxO3 films, Ferroelectrics properties, Magnetic properties, Chemical solution deposition