We report vapor-solid growth of Sn-doped and undopedAlNnanorods on n-type Si(100) wafers by halide vapor phase epitaxy via a non-catalytic vapor-solid (VS) growth mechanism. Pure Al and Sn metal powders were used as starting materials, and the reaction temperature was 700 oC. By controlling the HCl flow rate, we confirmed that the morphology of Sn-doped and undopedAlN changed into thin flims, nanorods and nanoneedles. The Sn-doped and undopedAlNnanorodswere 500 nm in length, and diameters were in the range of 15-100 nm. The Sn-doped and undopedAlNnanorods grew along the c-axis. The turn-on field and threshold electric field were decreased from 4.2 to 3.87 V/μm and 6.4 to 5.73 V/μm by Sn-doping, while the estimated field enhancement factorswere increased from 523 to 917

Keywords: Halide Vapor Phase Epitaxy, Vapor-solid mechanism, Sn-doped AlNnanorods, Field emission