Articles
  • Analysis of phase transitioned Ga2O3 thin films on Si substrates by post-annealing

  • Jang Beom An, Dong Ho Lee, Seon Jin Mun, Ji Ye Lee, Hyung Soo Ahn and Min Yang*

  • Department of Nano Semiconductor Engineering, Korea Maritime and Ocean University, Busan 49112, Korea

  • This article is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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This Article

  • 2025; 26(2): 197-202

    Published on Apr 30, 2025

  • 10.36410/jcpr.2025.26.2.197
  • Received on Oct 18, 2024
  • Revised on Dec 17, 2024
  • Accepted on Dec 20, 2024

Correspondence to

  • Min Yang

  • Department of Nano Semiconductor Engineering, Korea Maritime and Ocean University, Busan 49112, Korea
    Tel : +82-10-3648-2551 Fax: +82-51-404-3986

  • E-mail: myang@kmou.ac.kr