Articles
  • Growth of SiC nanostructures via mixed-source hydride vapor-phase epitaxy method

  • Suhyun Muna,#, Kyoung Hwa Kimb,#, Seonwoo Parka, Eunmin Kwona, Min Yanga, Hyung Soo Ahna,*, Injun Jeonc, Hunsoo Jeonb, Jae Hak Leea,d, Kwanghee Junge, Won Jae Leee, Myeong-Cheol Shinf and Sang-Mo Koof

  • aDepartment of Nano-Semiconductor Engineering, National Korea Maritime and Ocean University, Busan 49112, Republic of Korea
    bPower Semiconductor Commercialization Center, Busan Techno Park, Busan 46239, Republic of Korea
    cDaegu Gyeongbuk Institute of Science & Technology, Division of Energy Technology, Daegu 42988, Republic of Korea
    dLNBS Co., Ltd., Busan 48731, Republic of Korea
    eDepartment of Advanced Materials Engineering, Dong-Eui University, Busan 47340, Republic of Korea
    fDepartment of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of Korea

  • This article is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

References
  • 1. C.H. Park, B. Cheong, K. Lee, and K.J. Chang, Phys. Rev. B 49[7] (1994) 4485-4493.
  •  
  • 2. C. Persson and U. Lindefelt, J. Appl. Phys. 82[11] (1997) 5496-5508.
  •  
  • 3. X. Sun, C. Li, W. Wong, N. Wong, C. Lee, S. Lee, and B. Teo, J. Am. Chem. Soc. 124[48] (2002) 14464-14471.
  •  
  • 4. A.T. Mulatu, K.N. Nigussa, and L.D. Deja, Materialia 20 (2021) 101257.
  •  
  • 5. K. Kamaras, M.E. Itkis, H. Hu, B. Zhao, and R.C. Haddon, Science 301[5639] (2003) 1501.
  •  
  • 6. C. Vatankhah and H.A. Badehian, Solid State Commun. 344 (2022) 114672.
  •  
  • 7. C. Vatankhah and H.A. Badehian, Optik 237 (2021) 166740.
  •  
  • 8. M. Luo, Y.H. Shen, and T.L. Yin, Optik 130 (2017) 589-593.
  •  
  • 9. M. Li, L. Jiang, Y. Peng, T. Wang, T. Xiao, P. Xiang, and X. Tan, Optik 176 (2019) 401-409.
  •  
  • 10. K. Kefif, Y. Bouizem, A. Belfedal, J.D. Sib, D. Benlakehal, and L. Chahed, Optik 154 (2018) 459-466.
  •  
  • 11. M.D. Mohammadi, I.H. Salih, and H.Y. Abdullah, Mol. Simul. 46[17] (2020) 1405-1416.
  •  
  • 12. S. Chabi and K. Kadel, Nanomaterials 10[11] (2020) 2226.
  •  
  • 13. G. Liu, B.R. Tuttle, and S. Dhar, Appl. Phys. Rev. 2[2] (2015) 021307.
  •  
  • 14. A.K. Ray and M.N. Huda, J. Comput. Theor. Nanosci. 3[3] (2006) 315-341.
  •  
  • 15. A. Mavrandonakis, G.E. Froudakis, M. Schnell, and M. Mühlhäuser, Nano Lett. 3[11] (2003) 1481-1484.
  •  
  • 16. X. She, A.Q. Huang, Ó. Lucía, and B. Ozpineci, IEEE Trans. Ind. Electron. 64[10] (2017) 8193-8205.
  •  
  • 17. M. Östling, R. Ghandi, and C. Zetterling, Proc. 2011 IEEE 23rd Int. Symp. Power Semiconductor Devices and ICs, San Diego, CA, USA, 23-26 May 2011, p. 10.
  •  
  • 18. G. Wei, W. Qin, G. Wang, J. Sun, J. Lin, R. Kim, D. Zhang, and K. Zheng, J. Phys. D: Appl. Phys. 41[23] (2008) 235102.
  •  
  • 19. W.J. Choyke, Mater. Res. Bull. 4 (1969) S141.
  •  
  • 20. A.A. Lebedev, Semicond. Sci. Technol. 21[6] (2006) R17-R34.
  •  
  • 21. R. Han, X. Xu, X. Hu, N. Yu, J. Wang, Y. Tian, and W. Huang, Opt. Mater. 23[1-2] (2003) 415.
  •  
  • 22. J. Kim, F. Rena, and S.J. Peartonb, J. Ceram. Process. Res. 7[3] (2006) 239.
  •  
  • 23. J.-K. Lee and J.-R. Yoon, J. Ceram. Process. Res. 21[5] (2020) 533.
  •  
  • 24. C.K. Chan, R.N. Patel, M.J. O'Connell, B.A. Korgel, and Y. Cui, ACS Nano 4[3] (2010) 1443-1450.
  •  
  • 25. J. Shu, H. Li, R. Yang, Y. Shi, and X. Huang, Electrochem. Commun. 8[1] (2006) 51-54.
  •  
  • 26. L.-F. Cui, Y. Yang, C.-M. Hsu, and Y. Cui, Nano Lett. 9[9] (2009) 3370-3374.
  •  
  • 27. I.-J. Shon, J. Ceram. Process. Res. 17[11] (2016) 1171.
  •  
  • 28. X. He, A. Tang, Y. Li, Y. Zhang, W. Chen, and S. Huang, Surf. Sci. 563 (2021) 150269.
  •  
  • 29. B.M. Bang, H. Kim, J.-P. Lee, J. Cho, and S. Park, Energy Environ. Sci. 4[9] (2011) 3395.
  •  
  • 30. H. Li, X. Huang, L. Chen, Z. Wu, and Y. Liang, Electrochem. Solid-State Lett. 2[11] (1999) 547.
  •  
  • 31. H. Li, L. Shi, Q. Wang, L. Chen, and X. Huang, Solid State Ion. 148[3-4] (2002) 247-258.
  •  
  • 32. R.A. Huggins, J. Power Sources 81-82 (1999) 13-19.
  •  
  • 33. H. Wu and Y. Cui, Nano Today 7[5] (2012) 414-429.
  •  
  • 34. H. Wang, M. Wu, X. Lei, Z. Tian, B. Xu, K. Huang, and C. Ouyang, Nano Energy 49 (2018) 67-76.
  •  
  • 35. J.J. Wierer Jr, A. David, and M.M. Megens, Nat. Photon. 3[3] (2009) 163-169.
  •  
  • 36. P.R. Tavernier, E.V. Etzkorn, Y. Wang, and D.R. Clarke, Appl. Phys. Lett. 77[12] (2000) 1804-1806.
  •  
  • 37. T. Paskova, E.M. Goldys, R. Yakimova, E.B. Svedberg, A. Henry, and B. Monemar, J. Cryst. Growth 208[1-4] (2000) 18.
  •  
  • 38. H.S. Ahn, K.H. Kim, M. Yang, J.Y. Yi, H.J. Lee, J.H. Chang, H.S. Kim, S.W. Kim, S.C. Lee, Y. Honda, M. Yamaguchi, and N. Sawaki, Phys. Stat. Sol. (a) 202[6] (2005) 1048-1052.
  •  
  • 39. G.S. Lee, C. Lee, H. Jeon, C.Lee, S.G. Bae, H.S. Ahn, M. Yang, S.N. Yi, Y.M. Yu, J.H. Lee, Y. Honda, N. Sawaki, and S.W. Kim, Jpn. J. Appl. Phys. 55 (2016) 05FC02.
  •  
  • 40. H. Jeon, I. Jeon, G.S. Lee, S.G. Bae, H.S. Ahn, M. Yang, S.N. Yi, Y.M. Yu, Y. Honda, N. Sawaki, and S.W. Kim, Jpn. J. Appl. Phys. 56 (2017) 01AD07.
  •  
  • 41. S.G. Bae, I. Jeon, H. Jeon, K.H. Kim, M. Yang, S.N. Yi, J.H. Lee, H.S. Ahn, Y.M. Yu, N. Sawaki, and S.W. Kim, Jpn. J. Appl. Phys. 57 (2018) 01AD03.
  •  
  • 42. H.S. Ahn, S.W. Kim, G.S. Lee, K.H. Kim, J.H. Lee, D.H. Ha, Y.T. Chun, and S. Ryu, Semicond. Sci. Technol. 36[9] (2021) 095023.
  •  
  • 43. S. Park, S. Mun, K.H. Kim, M. Yang, Y.T. Chun, S.N. Yi, H.S. Ahn, J.H. Lee, Y.S. Jang, W.J. Lee, M.C. Shin, and S.M. Koo, J. Korean Phys. Soc. 84[3] (2024) 198-207.
  •  
  • 44. O. Kovalenkov, V. Soukhoveev, V. Ivantsov, A. Usikov, and V. Dmitriev, J. Cryst. Growth 281[1] (2005) 87-92.
  •  
  • 45. Y. Kumagai, T. Yamane, and A. Koukitu, J. Cryst. Growth 281[1] (2005) 62-67.
  •  
  • 46. K.H. Kim, G.S. Lee, H.S. Ahn, J.H. Lee, J. Kim, Y.T. Chun, M. Yang, S.N. Yi, S. Hwang, and S. Kim, Semicond. Sci. Technol. 37[4] (2022) 045016.
  •  
  • 47. A. Ashok, A. Kumar, J. Ponraj, and S.A. Mansour, Carbon 170 (2020) 452.
  •  
  • 48. W. Yang, X. Liu, X. Yue, J. Jia, and S. Guo, J. Am. Chem. Soc. 137[4] (2015) 1436-1439.
  •  
  • 49. Z.W. Tong, Y.F. Yuan, S.M. Yin, B.X. Wang, S.Y. Guo, and C.L. Mo, Mater. Lett. 311 (2022) 131587.
  •  
  • 50. M. Lin, J.P.Y. Tan, C. Boothroyd, K.P. Loh, E.S. Tok, and Y. Foo, Nano Lett. 7[8] (2007) 2234-2238.
  •  
  • 51. S. Iijima, Nature 354 (1991) 56-58.
  •  
  • 52. J. Kong, H.T. Soh, A.M. Cassell, C.F. Quate, and H. Dai, Nature 395 (1998) 878-881.
  •  
  • 53. Z.F. Ren, Z.P. Huang, J.W. Xu, J.H. Wang, P. Bush, M.P. Siegal, and P.N. Provencio, Science 282[5391] (1998) 1105-1107.
  •  
  • 54. T. Katayama, H. Araki, and K. Yoshino, J. Appl. Phys. 91[10] (2002) 6675-6678.
  •  
  • 55. Z.J. Pan and R.T. Yang, J. Catalysis 123[1] (1990) 206-214.
  •  
  • 56. T. Taguchia, N. Igawa, H. Yamamoto, S. Shamoto, and S. Jitsukawa, Physica E 28[4] (2005) 431-438.
  •  
  • 57. X.K. Li, L. Liu, Y.X. Zhang, S.D. Shen, S. Ge, and L.C. Ling, Carbon 39[2] (2001) 159-165.
  •  
  • 58. J. Patel, C. Balasubramanian, C. Sasmal, and A. Satyaprasad, Physica E 103 (2018) 377-382.
  •  
  • 59. H.X. Zhang, P.X. Feng, V. Makarov, B.R. Weiner, and G. Morell, Mater. Res. Bull. 44[1] (2009) 184-188.
  •  
  • 60. L. Li, Y. Chu, H. Li, L. Qi, and Q. Fu, Ceram. Int. 40[3] (2014) 4455-4460.
  •  
  • 61. Y. Zhang, X. Han, K. Zheng, Z. Zhang, X. Zhang, J. Fu, Y. Ji, Y. Hao, X. Guo, and Z.L. Wang, Adv. Funct. Mater. 17[17] (2007) 3435-3440.
  •  
  • 62. D. Wang, D. Xu, Q. Wang, Y. Hao, G. Jin, X. Guo, and K.N. Tu, Nanotechnology 19[21] (2008) 215602.
  •  
  • 63. X.D. Han, Y.F. Zhang, K. Zheng, X.N. Zhang, Z. Zhang, Y.J. Hao, X.Y. Guo, J. Yuan, and Z.L. Wang, Nano Lett. 7[2] (2007) 452-457.
  •  
  • 64. H. Kohno and H. Yoshida, Physica B 376-377 (2006) 890.
  •  
  • 65. W. Zhou, X. Liu, and Y. Zhang, Appl. Phys. Lett. 89[22] (2006) 223124.
  •  
  • 66. Q. Lu, J. Hu, K. Tang, Y. Qian, G. Zhou, X. Liu, and J. Zhu, Appl. Phys. Lett. 75[4] (1999) 507-509.
  •  
  • 67. K.F. Domke and B. Pettinger, J. Raman Spectrosc. 40[10] (2009) 1427-1433.
  •  
  • 68. M. Bechelany, A. Brioude, D. Cornu, G. Ferro, and P. Miele, Adv. Funct. Mater. 17[6] (2007) 939-943.
  •  
  • 69. M. Mastellone, A. Bellucci, M. Girolami, R.M. Montereali, S. Orlando, R. Polini, V. Serpente, E. Sani, V. Valentini, M.A. Vincenti, and D.M. Trucchi, Opt. Mater. 107 (2020) 109967.
  •  
  • 70. J. Zhu, J. Jia, F. Kwong, and D.H.L. Ng, Diamond Relat. Mater. 33 (2013) 5-11.
  •  
  • 71. H. Jian, M. Dayan, and X. Kewei, Rare Met. Mater. Eng. 44[11] (2015) 2692-2697.
  •  
  • 72. S. Nakashima and H. Harima, Phys. Stat. Sol. (a) 162[1] (1997) 9.
  •  
  • 73. A.C. Ferrari, Solid State Commun. 143[1-2] (2007) 47.
  •  
  • 74. R.P. Vidano, D.B. Fischbach, L.J. Willis, and T.M. Loehr, Solid State Commun. 39[2] (1981) 341-344.
  •  
  • 75. I. Pocsik, M. Hundhausen, M. Koos, and L. Ley, J. Non-Cryst. Solids 227-230 (1998) 1083.
  •  
  • 76. S.G. Sundaresan, A.V. Davydov, M.D. Vaudin, I. Levin, J.E. Maslar, Y. Tian, and M.V. Rao, Chem. Mater. 19[23] (2007) 5531-5537.
  •  
  • 77. D.W. Feldman, J.H. Parker, W.J. Choyke, and L. Patrick, Phys. Rev. 173[3] (1968) 787-793.
  •  
  • 78. H.Y. Kim, S.Y. Bae, N.S. Kim, and J. Park, Chem. Commun. 20 (2003) 2634.
  •  
  • 79. S. Zhang, B. Zhu, F. Huang, Y. Yan, E. Shang, S. Fan, and W. Han, Solid State Commun. 111[11] (1999) 647-651.
  •  
  • 80. I. Jeon, D. Yang, D. Yadav, J. Seo, H. Zhang, L. Yin, H.S. Ahn, and C. Cho, Electrochim. Acta 439 (2023) 141730.
  •  
  • 81. B.G. Kim, W.H. Shin, S.Y. Lim, B.S. Kong, and J.W. Choi, J. Electrochem. Sci. Technol. 3[3] (2012) 116.
  •  
  • 82. H.R. Byon, S.W. Lee, S. Chen, P.T. Hammond, and Y. Shao-Horn, Carbon 49[2] (2011) 457-467.
  •  
  • 83. I. Jeon, J.H. Hwang, T.G. Kim, L. Yin, H.W. Lee, J.P. Kim, H.S. Ahn, and C.-R. Cho, J. Ceram. Process. Res. 22[2] (2021) 192.
  •  
  • 84. C. Chen, X.C. Han, H.H. Shen, Y.Q. Tan, H.B. Zhang, Y. Qin, and S.M. Peng, Ceram. Int. 46[14] (2020) 23173-23179.
  •  

This Article

  • 2025; 26(1): 82-90

    Published on Feb 28, 2025

  • 10.36410/jcpr.2025.26.1.82
  • Received on Sep 30, 2024
  • Revised on Dec 15, 2024
  • Accepted on Jan 3, 2025

Correspondence to

  • Hyung Soo Ahn

  • Department of Nano-Semiconductor Engineering, National Korea Maritime and Ocean University, Busan 49112, Republic of Korea
    Tel : +82-10-8594-6302

  • E-mail: ahnhs@kmou.ac.kr