Articles
  • Growth characterization of Ga2O3 thin films deposited on metal substrates by MOCVD and evaluation of electrical properties

  • Nam Jun Ahn#, Jang Beom An#, Ji Ye Lee, Seon Jin Mun, Dong Ho Lee, Hyung Soo Ahn, Kyoung Hwa Kim and Min Yang*

  • Department of Nano Semiconductor Engineering, Korea Maritime and Ocean University, Busan 49112, Korea

  • This article is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

References
  • 1. A. Kumar, M. Moradpour, M. Losito, W.-T. Franke, S. Ramasamy, R. Baccoli, and G. Gatto, Energies 15[23] (2022) 9172.
  •  
  • 2. D. Garrido-Diez, and I. Baraia, Proc. IEEE Int. Workshop Electron. Control Meas. Signals Their Appl. Mechatronics (ECMSM). (2017) 1-6.
  •  
  • 3. J. Millan, P. Godignon, X. Perpiñà, A. Pérez-Tomás, and J. Rebollo, IEEE Trans. Power Electron. 29[5] (2014) 2155-2163.
  •  
  • 4. M. Orita, H. Ohta, M. Hirano, and H. Hosono, Appl. Phys. Lett. 77[25] (2000) 4166-4168.
  •  
  • 5. M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, Phys. Status Solidi A 211[1] (2014) 21-26.
  •  
  • 6. A.B. Yönetken and A. Yönetken, J. Ceram. Process. Res. 25[1] (2024) 97-103.
  •  
  • 7. J.H. Hwang and K.-T. Lee, J. Ceram. Process. Res. 21[2] (2020) 148-156.
  •  
  • 8. I. Jeon, J.H. Hwang, T.G. Kim, L. Yin, H.W. Lee, J.P. Kim, H.S. Ahn, and C.R. Cho, J. Ceram. Process. Res. 22[2] (2021) 192-199.
  •  
  • 9. H.F. Mohamed, C. Xia, Q. Sai, H. Cui, M. Pan, and H. Qi, J. Semicond. 40[1] (2019) 011801.
  •  
  • 10. M. Higashiwaki, AAPPS Bull. 32[1] (2022) 3.
  •  
  • 11. M. Handwerg, R. Mitdank, Z. Galazka, and S.F. Fischer, Semicond. Sci. Technol. 30[2] (2015) 024006.
  •  
  • 12. P. Jiang, X. Qian, X. Li, and R. Yang, Appl. Phys. Lett. 113[23] (2018) 232105.
  •  
  • 13. S.J. Pearton, J. Yang, P.H. Cary, F. Ren, J. Kim, M.J. Tadjer, and M.A. Mastro, App. Phys. Rev. 5[1] (2018) 011301.
  •  
  • 14. Z. Guo, A. Verma, X. Wu, F. Sun, A. Hickman, T. Masui, A. Kuramata, M. Higashiwaki, D. Jena, and T. Luo, Appl. Phys. Lett. 106[11] (2015) 111909.
  •  
  • 15. P. Sittimart, S. Ohmagari, T. Matsumae, H. Umezawa, and T. Yoshitake, AIP Adv. 11[10] (2021) 105114.
  •  
  • 16. G. Joshi, Y.S. Chauhan, and A. Verma, J. Alloys Compd. 883 (2021) 160799.
  •  
  • 17. Y. Song, P. Ranga, Y. Zhang, Z. Feng, H.-L. Huang, M.D. Santia, S.C. Badescu, C.U. Gonzalez-Valle, C. Perez, K. Ferri, R.M. Lavelle, D.W. Snyder, B.A. Klein, J. Deitz, A.G. Baca, J.P Maria, B. Ramos-Alvarado, J. Hwang, H. Zhao, X. Wang, S. Krishnamoorthy, B.M. Foley, and S. Choi, ACS Appl. Mater. Interfaces 13[32] (2021) 38477-38490.
  •  
  • 18. P. Yan, Z. Zhang, Y. Xu, H. Chen, D. Chen, Q. Feng, S. Xu, Y. Zhang, J. Zhang, C. Zhang, and Y. Hao, Vacuum. 204 (2022) 111381.
  •  
  • 19. N. Nepal, D.S. Katzer, B.P. Downey, V.D. Wheeler, L.O. Nyakiti, D.F. Storm, M.T. Hardy, J.A. Freitas, E.N. Jin, D. Vaca, L. Yates, S. Graham, S. Kumar, and D.J. Meyer, J. Vac. Sci. Technol. A 38[6] (2020) 063406.
  •  
  • 20. S.A.O. Russell, A. Pérez-Tomás, C.F. McConville, C.A. Fisher, D.P. Hamilton, P.A. Mawby, and M.R. Jennings, IEEE J. Electron Devices Soc. 5[4] (2017) 256-261.
  •  
  • 21. N.J. Ahn, J.B. An, H.S. Ahn, K.H. Kim, and M. Yang, J. Korean Cryst. Growth Cryst. Technol. 33[4] (2023) 125-131.
  •  
  • 22. S.B. Lee, D.Y. Yoon, N.M. Hwang, and M.F. Henry, Metall. Mater. Trans. A. 31 (2000) 985-994.
  •  
  • 23. J. Zhang, W. Ludwig, Y. Zhang, H.H.B. Sørensen, D.J. Rowenhorst, A Yamanaka, P.W. Voorhess, and H.F. Poulsen, Acta Mater. 191 (2020) 211-220.
  •  
  • 24. A.C. Caballero, J.F. FernBndez, C. Moure, and P. Duriin, J. Eur. Ceram. Soc. 17[4] (1997) 513-523.
  •  
  • 25. Y.-C. Lee, H.-J. Hsu, I.-Y. Huang, H.-J. Shih, and C. Pithan, J. Ceram. Process. Res. 24[6] (2023) 992-1000.
  •  
  • 26. S.J. Kim, D.J. Oh, S.J. Yu, and Y.D. Woo, J. Korean Phys. Soc. 49[9] (2006) 768-773.
  •  
  • 27. A.R. Hefner, R. Singh, J.S. Lai, D.W. Berning, S. Bouche, and C. Chapuy, IEEE Trans. Power Electron. 16[2] (2001) 273-280.
  •  
  • 28. M.K. Parida, S.T. Sundari, V. Sathiamoorthy, and S. Sivakumar, Nucl. Instrum. Methods Phys. Res., Sect. A 905 (2018) 129-137.
  •  
  • 29. X. Deng, L. Yang, Y. Wen, X. Li, F. Yang, H. Wu, H. Cao, J. Li, W. Chen, and B. Zhang, Superlattices Microstruct. 138 (2020) 106381.
  •  
  • 30. Alisha, P. Chander, V.K. Malik, and R. Chandra, J. Phys.: Conf. Ser. 2518[1] (2023) 012016.
  •  
  • 31. B. Bati, Ç. Nuhoğlu, M. Sağlam, E. Ayyildiz, and A. Türüt, Phys. Scr. 61[2] (2000) 209.
  •  
  • 32. X. Wu and E. S. Yang, J. Appl. Phys. 65[9] (1989) 3560-3567.
  •  
  • 33. P. Chattopadhyay and B. Raychaudhuri, Solid-State Electron. 35[7] (1992) 1023-1024.
  •  
  • 34. B. Şahin, H. Çetin, and E. Ayyildiz, Solid State Commun. 135[8] (2005) 490-495.
  •  

This Article

  • 2024; 25(3): 439-445

    Published on Jun 30, 2024

  • 10.36410/jcpr.2024.25.3.439
  • Received on Apr 4, 2024
  • Revised on May 28, 2024
  • Accepted on May 29, 2024

Correspondence to

  • Min Yang

  • Department of Nano Semiconductor Engineering, Korea Maritime and Ocean University, Busan 49112, Korea
    Tel : +82-10-3648-2551 Fax: +82-51-404-3986 E-mail: myang@kmou.ac.kr

  • E-mail: myang@kmou.ac.kr