Articles
  • Resistive switching random access memory based on Sn-incorporated Cs(PbxSn1-x)Br3 perovskite thin films

  • Seung-Beom Cho†, Hye-Yun Seong† and Il-Kyu Park*

  • Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Korea

  • This article is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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This Article

  • 2022; 23(5): 672-678

    Published on Oct 31, 2022

  • 10.36410/jcpr.2022.23.5.672
  • Received on Mar 20, 2022
  • Revised on May 31, 2022
  • Accepted on Jun 4, 2022

Correspondence to

  • Il-Kyu Park

  • Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Korea
    Tel : +82-2-970-6349 Fax: +82-2-973-6657

  • E-mail: pik@seoultech.ac.kr