Articles
  • Effect of annealing temperature on the optical properties of a bulk GaN substrate
  • Hee Ae Leea, Joo Hyung Leea, Seung Hoon Leea, Hyo Sang Kangb, Seong Kuk Leeb, Nuri Oha, Won Il Parka and Jae Hwa Parkb,*

  • aDivision of Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea
    bAMES Micron Co. LTD, 32 Singok-ro, Gochon-eup, Gimpo-si, Gyeonggi-do, 10126, Republic of Korea

References
  • 1. H. Morkoç, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76 (1994) 1363-1398.
  •  
  • 2. S. Yoshida, S. Misawa, and S. Gonda, J. Appl. Phys. 53 (1982) 6844-6848.
  •  
  • 3. I. Susanto, K.-Y. Kan, I.-S. Yu, J. Alloys Compd. 723 (2017) 21-29.
  •  
  • 4. A. Bchetnia, I. Kemis, A. Touré, W. Fathallah, T. Boufaden, B. El Jani, Semicond. Sci. Technol. 23 (2008) 125025.
  •  
  • 5. J. A Freitas Jr, J. Phys. D: Appl. Phys. 43 (2010) 073001.
  •  
  • 6. H. Lei, H.S. Leipner, J. Schreiber, J.L. Weyher, T. Wosiʼnski, I. Grzegory, J. Appl. Phys. 92[11] (2002) 6666-6670.
  •  
  • 7. R. Dwiliʼnski, R. Doradzinski, J. Garczynski. L. Sierzputowski, R. Kucharski, M. Zajac, M. Rudzinski, R. Kudrawiec, J. Serafinczuk, W. Strupinski, J. Cryst. Growth. 312 (2010) 2499-2502.
  •  
  • 8. S. Krukowski, Cryst. Res. Technol. 34[5-6] (1999) 785-795.
  •  
  • 9. C.-F Zhu, W.-K. Fong, B.-H. Leung, C.-C. Cheng, and C. Surya, IEEE Trans. Electron Devices 48[6] (2001) 1225-1230.
  •  
  • 10. J. A Freitas Jr, J. Phys. D: Appl. Phys. 43 (2010) 073001.
  •  
  • 11. J.H. Park, H.A. Lee, J.H. Lee, C.W. Park, J.H. Lee, H.S. Kang, H.M. Kim, S.H. Kang, S.Y. Bang, S.K. Lee, K.B. Shim, J. Ceram. Proces. Res. 18[2] (2017) 93-97.
  •  
  • 12. K. Motoki, SEI Technical 70 (2010) 99-136 .
  •  
  • 13. S.T. Kim, Y.J. Lee, D.C. Moon, C.H. Hong, T.K. Yoo, J. Crys. Growth 194 (1998) 37-42.
  •  
  • 14. H. Iwata, H. Kobayashi, T. Kamiya, R. Kamei, H. Saka, N. Sawaki, M. Irie, Y. Honda, H. Amano, J. Cryst. Growth 468 (2017) 835-838.
  •  
  • 15. M. Matys, M. Miczek, B. Adamowicz, Z.R. Zytkiewicz, E. Kaminska, A. Piotrowska, and T. Hashizume, Acta Physica Polonica A 120 (2011) A73-A75.
  •  
  • 16. K. Motoki, SEI Technical 70 (2010) 28-35.
  •  
  • 17. V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P.P. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, B. A. Haskell, P. T. Fini, J. S. Speck and S. Nakamura, Phys. Rev. B 75 (2007) 195217.
  •  
  • 18. H. Fujikura, T. Inoue, T. Kitamura, T. Konno, T. Suzuki, T. Fujimoto, T. Yoshida, M. Shibata, T. Saito, Phys. Status Solidi B 2018 (2018) 1-11.
  •  
  • 19. D. Pastor, R. Cuscó, L. Artús, G. González-Díaz, E. Iborra, J. Jiménez, F. Peiró, E. Calleja, J. Appl. Phys. 100 (2006) 043508.
  •  
  • 20. J. Guo, H. Fu, B. Pan, R. Kang, Chin. J. Aeronaut. (2020)
  •  
  • 21. J.H. Ryu, D.K. Oh, S.T. Yoon, B.G. Choi, J.W. Yoon, K.B. Shim, J. Cryst. Growth 292 (2006) 206-211.
  •  
  • 22. D.K. Oh, S.Y. Bang, B.G. Choi, P. Maneeratanasarn, S.K. Lee, J.H. Chung, J.A. Freitas Jr, KB. Shim, J. Cryst. Growth 356 (2012) 22-25.
  •  
  • 23. M.Y. Lee, and H.S. Im, J. Korean Phys. Soc. 60[10] (2012) 1809-1813.
  •  
  • 24. T.W. Kang, S.U. Yuldashev, D.Y. Kim, T.W. Kim, Jpn. Appl. Phys. 39 (2000) L25-L27.
  •  
  • 25. J.H. Park, Y.P. Hong, C.W. Park, H.M. Kim, D.K. Oh, B.G. Choi, S.K. Lee, K.B. Shim, J. Korean Cryst. Growth Cryst. Technol. 24 (2014) 135-139.
  •  
  • 26. Y. Saighsa, in “Advanced Piezoelectric Materials” (Woodhead Publishing. 2010) p.171-203.
  •  
  • 27. J. Chen, J.F. Wang, H. Wang, J.J. Zhu, S.M. Zhang, D.G. Zhao, D.S. Jiang, H. Yang, U. Jahn and K.H. Ploog, Semicond. Sci. Technol. 21 (2006) 1229-1235.
  •  
  • 28. SEMI, No.M83-1112 (2014) p.10.
  •  
  • 29. W.F. Smith, J. Hashemi, in “Foundation of Materials Science and Engineering, 4th edition” (SciTech Media, 2005) p.217-220.
  •  
  • 30. Y. Inoue, T. Hoshino, S. Takeda, K. Ishino, A. Ishida, and H. Fujiyasu, Appl. Phys. Lett. 85 (2004) 2340-2342.
  •  
  • 31. B.N. Feigelson, R.M. Frazier, M. Gowda, J.A. Freitas Jr, M. Fatemi, M.A. Mastro, J.G. Tischler, J. cryst. Growrh 310[17] (2008) 3934-3940.
  •  
  • 32. G. Nootz, A. Schulte, L. Chernyak, A. Osinsky, J. Jasinski, M. Benamara, Z. Liliental-Weber, Appl. Phys. Lett. 80[8] (2002) 1355.
  •  
  • 33. F.C. Wang, C.L. Cheng, Y.F Chen, C.C. Yang, Semicond. Sci. Technol. 22 (2017) 896-899.
  •  
  • 34. K. Upadhyaya, S. Sharvani, N. Ayachit, and S.M. Shivaprasad, RCS Adv. 9 (2019) 28554-28560.
  •  
  • 35. J.M.H. MSci, in “Raman scattering in GaN, AlN, and AlGaN: Basic Material Properties, Processing and Devices” (University of Bristol, 2002) p.63.
  •  
  • 36. M.A. Reshchikov, Phys. Status Solidi. C 8 (2011) 2136-2138.
  •  
  • 37. J. Neugebauer, and C.G. Van de Walle, Appl. Phys. Lett. 69[4] (1996) 503-505.
  •  
  • 38. D.O. Demchenko, I.C. Diallo, and M.A. Reshchikov, Phys. Rev. Lett. 110 (2013) 087404.
  •  
  • 39. K.H Kim, “The study on GaN grown by hydride vapor Variation of optical characteristics with the thickness of bulk GaN grown by HVPE 13 phase epitaxy” (Korea Marintime University, 2004) p.46.
  •  
  • 40. M.H. Lee, “A study on the fabrication GaN substrates by HVPE method” (Hanbat National University, 2003) p.37.
  •  
  • 41. L. Li, J.Yu, Z. Hao, L. Wang, J. Wang, Y. Han, H. Li, B. Xiong, C. Sun and Y. Luo, Comput. Mater. Sci. 129 (2017) 49-54.
  •  
  • 42. H. Gu, G. Ren, T. Zhou, F. Tian, Y. Xu, Y. Zhang, M. Wang, Z. Zhang, D. Cai, J. Wang and K. Xu, J. Alloys Compd. 674 (2016) 218-222.
  •  
  • 43. Y.J. Lee and S.T. Kim, Korean J. Met. Mater. 8 (1998) 591.
  •  
  • 44. M. Seon, T. Prokofyeva and M. Holtz, Appl. Phys. Lett. 76 (2000) 1842-1844.
  •  
  • 45. https://en.wikipedia.org/wiki/Band_gap
  •  
  • 46. N. Sharma, M. Hooda, and S.K. Sharma, Indian J. Phys. 93 (2019) 159-167.
  •  

This Article

  • 2020; 21(5): 609-614

    Published on Oct 31, 2020

  • 10.36410/jcpr.2020.21.5.609
  • Received on Aug 19, 2020
  • Revised on Oct 10, 2020
  • Accepted on Oct 12, 2020

Correspondence to

  • Jae Hwa Park
  • AMES Micron Co. LTD, 32 Singok-ro, Gochon-eup, Gimpo-si, Gyeonggi-do, 10126, Republic of Korea
    Tel : +82-70-4710-2881
    Fax: +82-31-992-2700

  • E-mail: jhpark@amesmicron.com