Articles
  • Investigation of the electrical properties of Ag/n-Si schottky diode obtained by two different methods

  • Vagif Nevruzoglu*, Melih Manir and Gizem Ozturk 

  • Department of Energy Systems Engineering, Recep Tayyip Erdogan University, 53100 Rize, Turkey

References
  • 1. S.M. Sze, in “Semiconductor Devices: Physics and Technology”, (John Wiley & Sons, 2008) p. 84.
  •  
  • 2. B. Sahin, H. Cetin, and H. Ayyildiz, Solid State Commun. 135 (2005) 490-495.
  •  
  • 3. S. Karatas, Microelectron. Eng. 87 (2010) 1935-1940.
  •  
  • 4. M.E. Aydin, K. Akkilic, and T. Kilicoglu, Physica B. 352 (2004) 312-317.
  •  
  • 5. Z. Ahmad and M.H. Sayyad, Physica E. 41 (2009) 631-634.
  •  
  • 6. S. Guduru, V.P. Singh, S. Rajaputra, S. Mishra, R. Mangu, and St. Omer, Thin Solid Films 518 (2010) 1809-1814.
  •  
  • 7. V. Nevruzoglu, M. Tomakin, E.F. Keskenler, and G. Ozturk, J. Ceram. Process. Res.18 (2017) 494-500.
  •  
  • 8. F.K. Konana, A. Betiéd, H.J.T. Nkuissib, K. Dakshib, B. Akaa, and B. Hartitib, J. Ceram. Process. Res. 18 (2017) 882-886.
  •  
  • 9. M. Amuthasurabi, J. Chandradass, V.R. Babu, P.B. Sethupathi, and M.L.J. Martin, J. Ceram. Process. Res. 18 (2017) 815-818.
  •  
  • 10. E. Bingöl, F. Bozali, E.F. Keskenler, V. Nevruzoğlu, and M. Tomakin, Turk. J. Mater 1 (2016) 19-24.
  •  
  • 11. M. Okutan and F. Yakuphanoğlu, Microelectron. Eng. 85 (2008) 646-653.
  •  
  • 12. C.W. Bates, J.C. White, and C. Ekeocha, 143 (2007) 38-41.
  •  
  • 13. O.H. Mahmood, A.G. İmer, and A. Korkut, ICSMD-2018, 1 (2019) 47-51.
  •  
  • 14. D. Korosak and B. Cvikl, ASDAM '98, 1 (1998) 137-140.
  •  
  • 15. W. Clayton, J. Bates, and C. Zhang, Aip Advances 3 (2013) 1-15.
  •  
  • 16. G.D. Yüzüak, E. Yüzüak, V. Nevruzoğlu, and İ. Dinçer, Applied Physics A. 125 (2019) 794-803.
  •  
  • 17. F. Heıdarpour, W.A. Wan, AB Karım Ghanı, F.R. Bın Ahmadun, S. Sobrı, M. Zargar, and M.R. Mozafarıa, Dig. J. Nanomater. Bios. 5 (2010) 787-796.
  •  
  • 18. M. Tomakin, M. Altunbaş and E. Bacaksız, Physica B. 406 (2011) 4355-4360.
  •  
  • 19. K.C. Lee, S.J. Lin, C.H. Lin, C.S. Tsai, and Y.J. Lu, Surf. Coat. Technol. 202 (2008) 5339-5342.
  •  
  • 20. D.K. Schroder, in “Semiconductor Materials and Device Characterization”, (Wiley, New York, 1990) p. 190.
  •  
  • 21. H.C. Card and E.H. Rhoderick, J. Phys. D: Appl. Phys. 4 (1971) 1589-1601.
  •  
  • 22. R.T. Tung, Mater. Sci. Eng. R: Rep. 35 (2001) 1-138.
  •  
  • 23. S. Oktik, G.J. Russell, and J. Woods, Semicond. Sci. Technol. 2l (1987) 661-665.
  •  
  • 24. K. Patel, K.K. Nanda, and S.N. Sahu, J. Appl. Phys. 85 (1999) 3666-3670.
  •  
  • 25. V.V. Kislyuk, M.I. Fedorchenko, P.S. Smertenko, O.P. Dimitriev, and A.A. Pud, J. Phys. D: Appl. Phys. 43 (2010) 185301-185311.
  •  
  • 26. R.T. Tung, Phys. Rev. B 45 (1992) 13509-13523.
  •  
  • 27. J.H. Werner and H.H. Guttler, J. Appl. Phys. 69 (1991) 1522-1533.
  •  
  • 28. A. Keffous, M. Siad, S. Mamma, Y. Belkacem, C.L. Chaouch, H. Menari, A. Dahmani, and W. Chergui, Appl. Surf. Sci. 218 (2003) 336-342.
  •  
  • 29. J.H. Lee, J.S. Yi, K.J. Yang, J.H. Park, and R.D. Oh, Thin Solid Films 431 (2003) 344-348.
  •  
  • 30. F.A. Padovani and R. Stratton, Solid-State Electron 9 (1966) 695-707.
  •  
  • 31. C.R. Crowell and V. L. Rideout, Solid-State Electron 12 (1969) 89-105.
  •  
  • 32. S.M. Sze, in “Physics of Semiconductor Devices” (Wiley Eastern Limited, 3rd edition, 1985) p. 170.
  •  
  • 33. E.H. Rhoderic and R.H. Williams, in “Metals Semiconductor Contacts” (Oxford University Press, 1988) p. 48.
  •  

This Article

  • 2020; 21(2): 256-262

    Published on Apr 30, 2020

  • 10.36410/jcpr.2020.21.2.256
  • Received on Jan 15, 2020
  • Revised on Mar 19, 2020
  • Accepted on Mar 20, 2020

Correspondence to

  • Vagif Nevruzoglu

  • Department of Energy Systems Engineering, Recep Tayyip Erdogan University, 53100 Rize, Turkey
    Tel : +90 464 2237518 Fax: +90 464 2237514

  • E-mail: vagif.nevruzoglu@erdogan.edu.tr