Articles
  • MIT characteristic of VO2 thin film deposited by ALD using vanadium oxytriisopropoxide precursor and H2O reactant

  • Changhee Shina, Namgue Leea, Hyeongsu Choib, Hyunwoo Parkb, Chanwon Jungb, Seokhwi Songb, Hyunwoo Yukb, Youngjoon Kimb, Jong-Woo Kimb, Keunsik Kimb, Youngtae Choib, Hyungtak Seoc,*, and Hyeongtag Jeona,b,*

  • aDivision of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, Korea
    bDivision of Materials Science and Engineering, Hanyang University, Seoul, Korea
    cDepartment of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon, Korea

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This Article

  • 2019; 20(5): 484-489

    Published on Oct 31, 2019

  • 10.36410/jcpr.2019.20.5.484
  • Received on Jun 9, 2019
  • Revised on Aug 6, 2019
  • Accepted on Aug 14, 2019

Correspondence to

  • Hyungtak Seo c , Hyeongtag Jeon a,b

  • aDivision of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, Korea
    bDivision of Materials Science and Engineering, Hanyang University, Seoul, Korea
    cDepartment of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon, Korea
    Tel : +82-31-219-3532 (H. Seo), +82-22220-0387 (H. Jeon)
    Fax: +82-31-219-1613 (H. Seo),+82-2-2292-3523 (H. Jeon)

  • E-mail: hseo@ajou.ac.kr , hjeon@hanyang.ac.kr