Sn-filled/Te-doped CoSb3 skutterudites (SnzCo4Sb11.2Te0.8) were prepared by encapsulated induction melting, and their electronic transport properties were investigated. A single δ-phase was obtained successfully by a subsequent isothermal heat treatment at 773 K for 5 days. The Seebeck coefficient and Hall coefficient confirmed that all the samples exhibited n-type conductivity. Te atoms acted as electron donors by substituting for Sb atoms. The temperature dependence of the electrical resistivity suggested that SnzCo4Sb11.2Te0.8 is a highly degenerate semiconducting material. The lattice contribution was found to be dominant over the thermal conductivity of SnzCo4Sb11.2Te0.8.

Keywords: Skutterudite, Thermoelectric, Void filling, Doping, Transport property.