Articles
  • Comparison of chlorine- and fluorine-based inductively coupled plasmas for the dry etching of PZT films
  • Jong Cheon Parka, Sungu Hwangb, Jong-Man Kima, Jin Kon Kima, Young-Hoon Yunc, Kwang Bo Shimd and Hyun Choa,*
  • a Department of Nanosystem and Nanoprocess Engineering, Pusan National University, Gyeongnam 627-706, Korea b Department of Nanomedical Engineering, Pusan National University, Gyeongnam 627-706, Korea c Department of Hydrogen & Fuel Cell Technology, Dongshin University, Jeonnam 520-714, Korea d Division of Advanced Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
Abstract
A comparative study on the etch rate and surface morphology of PZT films and etch selectivity for PZT over Pt has been conducted in chlorine- (Cl2 and BCl3) and fluorine (CF4 and SF6)-based inductively coupled plasmas. The PZT etch rate, surface morphology and etch selectivity for PZT over Pt films are a strong function of plasma composition, ion flux and ion energy in both chemistries. Chlorine-based inductively coupled plasmas produced higher etch rates for PZT (max. ~3500 Å/ minute) while fluorine-based plasmas showed higher etch rates (max. ~1800 Å/minute) for the Pt film. The maximum etch selectivity ~4.5 for PZT over Pt was obtained at a relatively high source power (900 W) and moderate RF chuck power (250 W) condition.

Keywords: lead zirconate titanate (PZT), inductively coupled plasma etching, chlorine- and fluorine-based plasmas, high rate dry etching of PZT, etch selectivity for PZT/Pt .

This Article

  • 2009; 10(5): 700-704

    Published on Oct 31, 2009

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