Articles - Structural and electrical properties of vanadium tungsten oxide thin films Grown on Pt/TiO2/SiO2/Si substrates
- Sung-Pill Nama,*, Sung-Gap Leeb and Young-Hie Leea
- a Dept. of Electronic Materials Engineering, Kwangwoon University, Seoul, Korea b Dept. of Ceramic Engineering, Eng. Res. Insti., Gyeongsang National University, JinJu-Si, Korea
Abstract
V1.9W0.1O5 thin films deposited on Pt/Ti/SiO2/Si substrates by an RF sputtering method exhibited fairly good and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constant of the V1.9W0.1O5 thin film annealed at 300 oC was 37.7, with a dielectric loss of 2.535, respectively. Also, the TCR values of the V1.9W0.1O5 thin films annealed at 300 oC were about -3.6%/K
Keywords: Vanadium, Tungsten, Thin film, TCR, Dielectric property.
This Article
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