Articles - Field effect transistor properties of ZnO nanowires
- Kyoung-Won Kima, Won-Seok Oha, Gun-Eik Janga,*, Dong-Won Parkb,c, Jeong-O Leeb and Beom-Soo Kimc
- a Department of Advanced Materials Engineering, CBITRC, Chungbuk National University, Cheongju 361-763, Korea b Fusion Biotechnology Research Center, Korea Research Institute of Chemical Technology, Daejeon 305-343, Korea c Department of Chemical Engineering, Chungbuk National University, Cheongju 500-712, Korea
Abstract
Zinc oxide (ZnO) nanostructures were grown on Si (001) substrates by thermal chemical vapor deposition without any catalysts. The deposition temperatures varied from 800 oC to 1100 oC. SEM and XRD data suggest the nanostructures are wellaligned, single ZnO crystals with a (0002) preferential orientation. Back-gate ZnO nanowire field effect transistors (FET) were also successfully fabricated using a photolithography process. The fabricated nanowire FET exhibited Ohmic contact between the ZnO nanowire channels and Au metal electrodes. The ZnO nanowire exhibited n-type field effect transistor behavior denoted by an increase in current with increasing gate voltage.
Keywords: Thermal CVD, Zinc Oxide, Nanostructures, and FET.
This Article
Copyright 2019 International Orgranization for Ceramic Processing. All rights reserved.Clean-Energy Research Institute(CRI), Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea
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