Multilayered PZT/BaTiO3/PZT thick/thin/thick films were fabricated by two different methods-thick films of Pb1.1(Zr0.52Ti0.48)O3 by a screen printing method on alumina substrate electrode with Pt, thin films of BaTiO3 by a spin-coating method with PZT thick films and once more thick films of the PZT by a screen printing method on the BaTiO3 layer. We investigated the effect of phase, composition, and interfacial state of the BaTiO3 thin film layers at the interface between the PZT thick films. The structural and the dielectric properties were investigated for the effect of various stacking sequences of sol-gel-prepared BaTiO3 layers at the interface of the PZT thick films. The insertion of the BaTiO3 interlayer yielded PZT thick films with homogeneous and dense grain structures regardless of the number of the BaTiO3 layers. These results suggested that there is coexistence of the PZT phase and the BaTiO3 phase or the presence of a modified BaTiO3 at the interfaces between the PZT thick films. The leakage current density of a multilayered PZT-7 film is less that 1.5×10−9 A/cm2 at 5 V.

Keywords: Pb1.1(Zr0.52Ti0.48)O3, BaTiO3, thick/thin film, multilayer, sol-gel.