Articles
  • Electrodeposition of an alumina precursor on a silicon carbide surface 
  • Masaru Muraoa, Tomoyuki Maedaa, Naoki Matsunagab, Soichiro Sameshimaa and Yoshihiro Hirataa,*
  • a Department of Advanced Nanostructured Materials Science and Technology, Kagoshima University, 1-21-40 Korimoto, Kagoshima 890-0065, Japan b Department of Applied Chemistry and Chemical Engineering, Kagoshima University, 1-21-40 Korimoto, Kagoshima 890-0065, Japan
Abstract
An electrodeposition method was used to form nanometre-sized alumina particles on a silicon carbide surface. A direct current in the range from 0.15 to 11.8 mA/m(2) was flowed between a cylindrical carbon cathode and a porous silicon carbide anode in an aqueous solution containing ethylenediantinetetraacetatoaluminium (III) (Al-EDTA(-)) at a pH 6. The current density increased with an increase of the applied voltage and showed a maximum as a function of deposition time. The deposited alumina precursor was estimated to be (OH)AI(OOCH)2. After calcination at 800 degrees C in an Ar atmosphere, the uniformly deposited precursor changed to alumina particles with a specific surface area of 44.3 m(2)/g.

Keywords: electrodeposition; current density; alumina precursor; silicon carbide

This Article

  • 2007; 8(5): 312-315

    Published on Oct 30, 2007

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