Tin oxide (SnO2) thin films were prepared on glass substrates by a Plasma Enhanced Chemical Vapor Deposition (PECVD) method at different temperatures, The XRD data indicate that films are polycrystalline SnO2, which is in the tetragonal system with a rutile-type structure. As the deposition temperature was increased, the texture plane of a film changed from the (200) plane to denser (211) and (110) planes. SnO2 thin films prepared at 275 degrees C have a high resistivity of 1.07x10-1 Q-cm and low transmittance of 69.78 %. On the other hand, SnO2 thin films deposited at 325 similar to 425 degrees C show an electrical resistivity of similar to 10(-2) Q-cm and a transmission coefficient between 80% and 85% in most of the visible spectrum. The properties Of SnO2 films were critically affected by the deposition temperature.

Keywords: tin oxide; PECVD; transmittance; resistivity