Articles
  • Indium assisted hydride vapor phase epitaxy of GaN film 
  • Guanghui Yu*, Benliang Lei, Haohua Ye, Sheng Meng, Ming Qi, Aizhen Li, Pierre Ruteranaa, Jun Chenb and Gérard Noueta
  • State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China a Laboratoire Structures des Interfaces et Fonctionnalité des Couches Minces, UMR CNRS 6176, ENSICAEN, 6 Boulevard du Maréchal Juin, 14050 Caen cedex, France b Laboratoire Universitaire de Recherche d'Alençon, IUT d'Alençon, 61250 Damigny, France
Abstract
In order to increase the migration length of adatoms in hydride vapor phase epitaxy (HVPE) of GaN films, indium was used as a surfactant in HVPE growth. For samples with indium, an increase of crystalline quality was confirmed by X-ray diffraction measurements, and an improvement of surface morphology was also observed. SIMS analysis showed that indium was incorporated in the as-grown GaN film, and indium related photoluminescence (PL) was also detected.

Keywords: GaN; substrate; HVPE; surfactant; SIMS

This Article

  • 2006; 7(2): 180-182

    Published on Jun 30, 2006

Correspondence to

  • E-mail: