This study investigates the effects of using inhibitors during the deposition of PbSe films by Chemical Bath Deposition method. No prior research has addressed the role of inhibitors in the chemical bath deposition of PbSe films. In this study, the effect of the inhibitor on PbSe films was investigated for the first time. Structural characterization was performed using the data derived from XRD analysis. Analyses showed that inhibitor addition significantly reduced the sizes of crystallites in deposited films, with sizes varying between 45.44 nm and 33.94 nm. The four-probe method was employed to measure the surface resistivity of the films, and it was observed that the resistance increased by up to 30-fold depending on the presence of the inhibitor. SEM and EDX measurements were employed to investigate the surface morphology and chemical composition of the films, respectively. While the use of inhibitors was found to influence the grain structure, EDX analysis indicated that the films were selenium-rich in terms of atomic percentage. Images of the films demonstrated that PbSe adhered uniformly and compactly to the surfaces of the glass substrates.

Keywords: PbSe, CBD, Inhibitor, Semiconductor films.