Articles
  • Analysis of phase transitioned Ga2O3 thin films on Si substrates by post-annealing

  • Jang Beom An, Dong Ho Lee, Seon Jin Mun, Ji Ye Lee, Hyung Soo Ahn and Min Yang*

  • Department of Nano Semiconductor Engineering, Korea Maritime and Ocean University, Busan 49112, Korea

  • This article is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We deposited amorphous Ga2O3 thin films on p-type Si(111) substrates at 500 °C using metal-organic chemical vapor deposition (MOCVD) to obtain a smooth thin film. After the deposition, the films were annealed in N2 atmosphere at temperatures ranging from 600 °C to 850 °C. It was observed that the crystal structure transitioned at temperatures of 650 °C and 800 °C, with an overall smooth surface, though surface roughness increased at the phase transition temperatures. O1s binding energy shifted based on the initial amorphous state of the film. Additionally, electrical characterization showed that while significant current flowed up to temperature of 650 °C, the current decreased when the beta phase began to emerge. Schottky barrier potential and ideality factor showed strong dependence on the post annealing temperatures.


Keywords: Ga2O3, MOCVD, Phase transition, Post-annealing, p-type Si(111).

This Article

  • 2025; 26(2): 197-202

    Published on Apr 30, 2025

  • 10.36410/jcpr.2025.26.2.197
  • Received on Oct 18, 2024
  • Revised on Dec 17, 2024
  • Accepted on Dec 20, 2024

Correspondence to

  • Min Yang

  • Department of Nano Semiconductor Engineering, Korea Maritime and Ocean University, Busan 49112, Korea
    Tel : +82-10-3648-2551 Fax: +82-51-404-3986

  • E-mail: myang@kmou.ac.kr