Articles
  • Growth of SiC nanostructures via mixed-source hydride vapor-phase epitaxy method

  • Suhyun Muna,#, Kyoung Hwa Kimb,#, Seonwoo Parka, Eunmin Kwona, Min Yanga, Hyung Soo Ahna,*, Injun Jeonc, Hunsoo Jeonb, Jae Hak Leea,d, Kwanghee Junge, Won Jae Leee, Myeong-Cheol Shinf and Sang-Mo Koof

  • aDepartment of Nano-Semiconductor Engineering, National Korea Maritime and Ocean University, Busan 49112, Republic of Korea
    bPower Semiconductor Commercialization Center, Busan Techno Park, Busan 46239, Republic of Korea
    cDaegu Gyeongbuk Institute of Science & Technology, Division of Energy Technology, Daegu 42988, Republic of Korea
    dLNBS Co., Ltd., Busan 48731, Republic of Korea
    eDepartment of Advanced Materials Engineering, Dong-Eui University, Busan 47340, Republic of Korea
    fDepartment of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of Korea

  • This article is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

SiC nanostructures are stable without raw material loss even in high-temperature and extreme environments. Thus, they have applications in power semiconductors, optoelectronic devices, and secondary batteries. In this study, SiC nanostructures were grown via the mixed-source hydride vapor-phase epitaxy method with Si and graphite sources, and the growth mechanism was elucidated. The SiC nanostructures primarily grew between the SiC substrate and the graphite source, whereas carbon nanostructures grew on the surface of the graphite source. The properties of the SiC nanostructures grown in this study were characterized using field-emission scanning electron microscopy, energy dispersive spectroscopy, Raman spectroscopy, X-ray diffraction, and high-resolution transmission electron microscopy. The d-spacing between two adjacent lattice fringes was 0.25 nm, which is in good agreement with the interplanar spacing in the (111) or (102) plane directions of SiC. Moreover, the applicability of SiC nanostructures was evaluated by applying the material, which coexists with carbon nanostructures, as an anode in a lithium-ion battery.


Keywords: Mixed-source hydride vapor-phase epitaxy method, SiC nanostructures, Hexagonal SiC, Lithium-ion battery, Raman spectroscopy.

This Article

  • 2025; 26(1): 82-90

    Published on Feb 28, 2025

  • 10.36410/jcpr.2025.26.1.82
  • Received on Sep 30, 2024
  • Revised on Dec 15, 2024
  • Accepted on Jan 3, 2025

Correspondence to

  • Hyung Soo Ahn

  • Department of Nano-Semiconductor Engineering, National Korea Maritime and Ocean University, Busan 49112, Republic of Korea
    Tel : +82-10-8594-6302

  • E-mail: ahnhs@kmou.ac.kr