Articles
  • Structural and electrical behaviour studies in K doped BaSnO3 for IT-SOFC applications

  • De Wua,* and Chengkai Lib

  • aSchool of Environment and Resources, Taiyuan University of Science and Technology, 030024, Taiyuan, China
    bSchool of Materials Science and Engineering, Taiyuan University of Science and Technology, 030024, Taiyuan, China

  • This article is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

In the present work, we report the synthesis, crystal structure, and charge transport properties of K doped BaSnO3(Ba0.8K0.2O3). The powder X-ray diffraction showed the formation of single phase with cubic structure. The total conductivity was measured using complex impedance analysis over a temperature range 30-750 oC and frequency 10 Hz to 10 MHz. The maximum conductivity was found to be 6.63 × 10-3 Scm-1 at 750 oC. The calculated activation energy from ac conductivity was found to be 0.40 eV. The total conductivity was found to increase with increase in temperature.


Keywords: Crystal structure, Electron microscopy, Grain boundaries, Sol-gel preparation, Thermal analysis, X-ray techniques.

This Article

  • 2024; 25(6): 1052-1055

    Published on Dec 31, 2024

  • 10.36410/jcpr.2024.25.6.1052
  • Received on Oct 2, 2024
  • Revised on Dec 14, 2024
  • Accepted on Dec 14, 2024

Correspondence to

  • De Wu

  • School of Environment and Resources, Taiyuan University of Science and Technology, 030024, Taiyuan, China
    Tel : +086 13603510228

  • E-mail: 385838111@qq.com