Xiang-Xiang Luoa,b*, Cheng-Fang Qiaoa, Simon R Hallb and Chun-Sheng Zhoua,*
aCollege of Chemical Engineering and Modern Materials, Shangluo University, China
bSchool of Chemistry, University of Bristol, UK
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Thick Cadmium zinc telluride epitaxial films were grown on (100)GaAs substrate by Close-Spaced Sublimation. The growth rate was around 1 μm/min. SEM observations and XRD θ-2θ scan and ф scan revealed well-defined epitaxial features of the films. The films were found to be polycrystalline at the early stage of growth. As growth progressed, the films gradually became oriented until an epitaxial layer was formed. The polycrystalline to monocrystalline transition was achieved by preferential lateral growth of the grains and with the aid of migration of atoms in the film. This growth mode differs from the well-established epitaxy where a suitable lattice fit is expected from the early stages of film growth. This mode can better guide the growth mode of CZT thick films, and can grow large volume and high-quality thick films. High quality thick films can be better applied in fields such as solar cells, infrared and ultraviolet detection, and X-ray detection.
Keywords: cadmium zinc telluride, epitaxial film, close-spaced sublimation, thick film
2023; 24(6): 935-940
Published on Dec 31, 2023
aCollege of Chemical Engineering and Modern Materials, Shangluo University, China
bSchool of Chemistry, University of Bristol, UK
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