Articles
  • Coating of Si3N4 with HAp via atomic layer deposition
  • Seniz R. Kushan Akin*

  • Department of Materials Science and Engineering, Cankaya University, Ankara, Turkey

  • This article is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Silicon nitride (Si3N4) is an attractive implant material, particularly in orthopedic surgery. Although it has only been on the market for spinal fusion surgery requirements so far, it is also a promising candidate for other implant applications where load-bearing is crucial. In this study, we aimed to examine the potential of making the material surface more advantageous for various implant applications by coating it with a very thin hydroxyapatite (HAp) layer using the atomic layer deposition (ALD) method. This was done to improve the material's bioactivity without sacrificing its mechanical properties. Characterization results showed that using a 3:1 CaO:PO4 ALD cycle ratio resulted in the formation of very fine crystalline HAp after heat treatment at 500 °C. The bioactivity assessment made by immersing the coated film in SBF revealed HAp formation on the surface, and it was observed that the bioactivity of this surface improved compared to the uncoated one


Keywords: Silicon nitride, Atomic layer deposition, Hydroxyapatite

This Article

  • 2023; 24(4): 736-741

    Published on Aug 31, 2023

  • 10.36410/jcpr.2023.24.4.736
  • Received on Jul 12, 2023
  • Revised on Aug 8, 2023
  • Accepted on Aug 8, 2023

Correspondence to

  • Seniz R. Kushan Akin
  • Department of Materials Science and Engineering, Cankaya University, Ankara, Turkey
    Tel : +90 312 233 1502 Fax: +90 312 233 1026

  • E-mail: senizakin@cankaya.edu.tr