Articles
  • Effect of La2O3 on the microstructure and electrical properties of ZnO linear resistors

  • Yajun Fu#, Jiajia Lu#, Jin Wang and Liangfeng Li*

  • School of Materials and Chemistry, Southwest University of Science and Technology, Mianyang 621010, China

  • This article is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

ZnO-MgO-Al2O3-TiO2-Y2O3 linear resistors with different amount of La2O3 were successfully prepared by the conventional solid-state sintering method. The crystalline phase composition, microstructure, and electrical properties of La2O3 doped ZnO linear resistors were investigated. The results show that La2O3 influences the lattice of ZnO and generates La-rich phase at the grain boundaries, which improves the dense density of ZnO linear resistors. The addition of La2O3 further affect the electrical properties of ZnO linear resistors, such as the temperature stability. The sample with 0.5 wt.% La2O3 show excellent electrical performance with an resistance-temperature coefficient of 0.21×10-3/°C and an nonlinear coefficient of 1.05


Keywords: ZnO linear resistor, La2O3, Microstructure, Electrical properties

This Article

  • 2023; 24(4): 728-735

    Published on Aug 31, 2023

  • 10.36410/jcpr.2023.24.4.728
  • Received on Jun 5, 2023
  • Revised on Jul 17, 2023
  • Accepted on Jul 28, 2023

Correspondence to

  • Liangfeng Li

  • School of Materials and Chemistry, Southwest University of Science and Technology, Mianyang 621010, China
    Tel : +86-0816-2419203

  • E-mail: liliangfeng@swust.edu.cn