Liqi Cui, Ruifeng Niu, Depeng Wang and Weitian Wang*
School of Physics and Electronic Information, Yantai University, Yantai 264005, P.R. China
This article is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Single-phased indium doped titanium dioxide (Ti1-xInxO2, x=0~5%) ceramics were synthesized by using solid-state reaction method in this study. The doping effect on the dielectric and impedance properties was investigated in a broad frequency range from 102 Hz to 106 Hz. The observed dielectric behavior can be ascribed to the Universal Dielectric Response. In higher frequency field, the dielectric permittivity varies slightly with the doping concentration x. However, the measured dielectric constant increases significantly with the increase of doping concentration within lower frequency range. The charged grain-boundary cores originated from the doping trivalent ion can be used to explain the results
Keywords: Ceramics, Dielectric properties, Impedance analysis
2023; 24(2): 348-352
Published on Apr 30, 2023
School of Physics and Electronic Information, Yantai University, Yantai 264005, P.R. China
Tel : +86 13573512787 Fax: +86 535 6901947