Jangwon Hana,b, SangMin Jeongc, Ji Yeon Parkb, Hyun-Geun Leeb, Weon-Ju Kimb, Chan Parka and Daejong Kimb,*
aSchool of Materials Science & Engineering, Seoul National University, Seoul 08826, Republic of Korea
bNuclear Materials Development Division, Korea Atomic Energy Research Institute, Daejeon 34057, Republic of Korea
cSiC Division, HANA Materials, Asan 31413, Republic of Korea
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Tantalum carbide (TaC), one of the ultra-high temperature ceramics, was chemically vapor-deposited at 1100 - 1300 oC in a TaCl5-C3H6-H2 system. Microstructural evolution of TaC was evaluated after heat treatment at 1850 oC for 4 hours. Various tantalum carbides with different orientation and microstructure were obtained depending on the deposition temperature and the position. Crystallophic preferred orientation of the TaC changed from highly oriented (111) and (200), to random texture, as deposition temperatures increase. The continuous feed of TaCl4 powders using screw-driven feeder led to the fluctuation of TaCl4 partial pressure during the deposition process, resulted in a low crystallinity and formation of micropores. A dense TaC was only obtained at the high partial pressure of TaCl5. Heat treatment dramatically enhanced crystallinity but micropores were coalesced into large pores along grain boundaries. The influence of crystallophic orientation and microstructure on microstructural evolution and hardness during heat treatment were investigated
Keywords: Tantalum Carbide, Chemical Vapor Deposition, Heat treatment, Orientation
2022; 23(6): 751-757
Published on Dec 31, 2022
Nuclear Materials Development Division, Korea Atomic Energy Research Institute, Daejeon 34057, Republic of Korea
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