Articles
  • Structural and electrical properties of potassium tantalate niobate heterolayer thin films prepared by chemical solution deposition method

  • Byeong-Jun Parka,†, Sam-Haeng Leea,b,†, Myung-Gyu Leea,b, Joo-Seok Parkb, Byung-Cheul Kimc and Sung-Gap Leea,*

  • aDept. of Materials Engineering and Convergence Technology, RIGET, Gyeongsang National University, Jinju 52828, Korea
    bBusiness Support Division, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Korea
    cDept. of Convergence Electronic Engineering, Gyeongsang National University, Jinju 52828, Korea

  • This article is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

In this study, K(Ta0.65Nb0.35)O3/K(Ta0.50Nb0.50)O3 heterolayer films were fabricated by the chemical solution deposition and spin-coating method and their structural and electrical properties were measured. All specimens represented a pseudo-cubic structure with a lattice constant of approximately 0.3999-0.4003 nm along with an observable K-deficient Ta2O5∙n(KTaO3) pyrochlore phase. Average thickness for a single coating was about 60~70 nm and average grain size was approximately 105-110 nm. Curie temperature was about 7oC and no dependence was observed on the number of coatings and sintering atmosphere. Remanent polarization of KTN heterolayer films decreased abruptly at about 50oC. The 6-coated KTN heterolayer film sintered in O2 atmosphere showed good ΔT of 1.93oC at about 60oC and ∆T/∆E of 0.15×10-6 KmV-1


Keywords: Potassium tantalate niobate, Heterolayer thin films, Electrocaloric effect, Hysteresis loop, Ferroelectric properties

This Article

  • 2022; 23(3): 252-256

    Published on Jun 30, 2022

  • 10.36410/jcpr.2022.23.3.252
  • Received on Jul 22, 2021
  • Revised on Jan 18, 2022
  • Accepted on Jan 25, 2022

Correspondence to

  • Sung-Gap Lee

  • Dept. of Materials Engineering and Convergence Technology, RIGET, Gyeongsang National University, Jinju 52828, Korea
    Tel : +82-10-2686-4427 Fax: +82-55-772-1689

  • E-mail: lsgap@gnu.ac.kr