Single crystals of p-CdIn2Te4 were grown by the Bridgman method without using seed crystals. From photocurrent measurements, it was found that three peaks, A, B, and C, correspond to the intrinsic transition from the valence band states of Γ7(A), Γ6(B), and Γ7(C) to the conduction band state of Γ6, respectively. Crystal field splitting and spin orbit splitting were found to be at 0.2360 and 0.1119 eV, respectively, from found to be photocurrent spectroscopy. The temperature dependence of the CdIn2Te4 band gap energy was given by the equation Eg(T) = Eg(0) − (9.43 × 10−3)T2/(2676 + T). Eg(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band states of A, B, and C, respectively. The band gap energy of p-CdIn2Te4 at room temperature was determined to be 1.2023 eV

Keywords: CdIn2Te4 single crystal, Photocurrent spectroscopy, Crystal field splitting, Spin orbit splitting, Band gap energy