Articles
  • Effect of annealing atmosphere on defects, light absorption and imprinting properties of Bi4Ti3O12 films

  • Lingxu Wang*, Huiying Liu, Liqiang Liu and Fengqing Zhang*

  • School of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, China

  • This article is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

In order to studying the effect of the annealing atmospheres (nitrogen and air) on the films, two kinds of Bi4Ti3O12 (BIT) samples were prepared by the sol-gel and layer-by-layer thermal annealing method. Various factors, including lesser VO••, more V''Bi and greater grain size in the air-annealed samples, interacted on the ferroelectric and light absorption properties. However, more (V''Bi) - (VO••) reinforced the imbalance of electron capture in the ITO/BIT/Au capacitors, resulting in stronger imprinting. And the arrangement of (V''Bi) - (VO••) and the domain pinning in the air-annealed films resulted in more serious aging effect


Keywords: Bi vacancies, Light absorption, Imprinting, Aging

This Article

  • 2021; 22(1): 121-129

    Published on Feb 28, 2021

  • 10.36410/jcpr.2021.22.1.121
  • Received on May 18, 2020
  • Revised on Jul 26, 2020
  • Accepted on Aug 14, 2020

Correspondence to

  • Lingxu Wang and Fengqing Zhang

  • School of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, China
    Tel : +86053186367285 Fax: +86053186367285

  • E-mail: keji424@126.com