Articles
  • Effect of annealing temperature on the optical properties of a bulk GaN substrate

  • Hee Ae Leea, Joo Hyung Leea, Seung Hoon Leea, Hyo Sang Kangb, Seong Kuk Leeb, Nuri Oha, Won Il Parka and Jae Hwa Parkb,*

  • aDivision of Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea
    bAMES Micron Co. LTD, 32 Singok-ro, Gochon-eup, Gimpo-si, Gyeonggi-do, 10126, Republic of Korea

Abstract

Variation of optical properties in a bulk GaN substrate have experimentally investigated with respect to different annealing conditions of 700 - 1,000 oC. As-annealed GaN was characterized by scanning electron microscopy, photoluminescence, and Raman spectroscopy. The experimental results demonstrated that the crystallinity and internal residual compressive stress of GaN are most effectively improved when heat-treated at 900 oC for three hours. The optical characteristics were also improved by enhancing the quality of the GaN substrate by decreasing both the defect density and the residual stress. It was also confirmed that the effect of the heat treatment was excellent given that impurities were effectively removed by this process.


Keywords: Hydride vapor phase epitaxy, Gallium nitride, Optical property, Crystallinity, Residual stress, Defect density

This Article

  • 2020; 21(5): 609-614

    Published on Oct 31, 2020

  • 10.36410/jcpr.2020.21.5.609
  • Received on Aug 19, 2020
  • Revised on Oct 10, 2020
  • Accepted on Oct 12, 2020

Correspondence to

  • Jae Hwa Park

  • AMES Micron Co. LTD, 32 Singok-ro, Gochon-eup, Gimpo-si, Gyeonggi-do, 10126, Republic of Korea
    Tel : +82-70-4710-2881
    Fax: +82-31-992-2700

  • E-mail: jhpark@amesmicron.com