Articles
  • Effects of NH3 pre-treatment time on nitrogen-polar GaN grown on carbon-face 4H-SiC using high-temperature metal-organic chemical vapor deposition

  • Minho Kima, Uiho Choia, Kyeongjae Leea, Donghyeop Junga, Taemyung Kwaka, Byeongchan Soa, KapRyeol Kub and Okhyun Nama,*

  • aNano-Optical Engineering, Korea Polytechnic University (KPU), Siheung, Gyeonggi 427-793, Republic of Korea
    bSKC Advanced Technology R&D Center, #12, Jeongja-ro, Jangan-hu, Suwon-Si, Gyeonggi-do, Republic of Korea

Abstract

We investigated the effects of NH3 pretreatment time on N-polar GaN grown on 4o off-cut C-face 4H-SiC using high temperature metal-organic chemical vapor deposition. The NH3 pre-treatment time was changed from 2 to 32 minutes at 1,350 oC. The polarity of layer was confirmed by aqueous KOH etching method. As the NH3 treatment time increased, the etch rate of the layer was increased and the structural and optical properties were deteriorated. The total hillock density of samples was 7.5, 12.9, and 25.1 × 102 cm-2 respectively. Furthermore, we compared the luminescence spectra of Ga-polar and N-polar GaN films using low-temperature photo-luminescence measurement. The N-polar GaN layer showed Y1 peak (3.45 eV), which is attributed to the existence of inversion domain boundary (IDB) in the layer.


Keywords: Epitaxy; Metalorganic chemical vapor deposition; Gallium nitride; Nitrogen polar; Pre-treatment

This Article

  • 2020; 21(5): 579-585

    Published on Oct 31, 2020

  • 10.36410/jcpr.2020.21.5.579
  • Received on May 1, 2020
  • Revised on Jun 19, 2020
  • Accepted on Jul 16, 2020

Correspondence to

  • Okhyun Nam

  • Nano-Optical Engineering, Korea Polytechnic University (KPU), Siheung, Gyeonggi 427-793, Republic of Korea
    Tel : +82-31-8041-0718
    Fax: +82-31-8041-0729

  • E-mail: ohnam@kpu.ac.kr